View SI3454DV_357223.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SI3454DV
October 2001
SI3454DV
N-Channel PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
* 4.2 A, 30 V. RDS(ON) = 65 m @ VGS = 10 V RDS(ON) = 95 m @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON) * Low gate charge (9.4 nC typical) * High power and current handling capability
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W C
4.2 20 1.6 0.8 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
C/W C/W
Package Marking and Ordering Information
Device Marking .454 Device SI3454DV Reel Size 7'' Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
SI3454DV Rev A
SI3454DV
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf trr Qg Qgs Qgd IS VSD
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ=70C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 4.2 A VGS = 4.5 V, ID = 3.4 A VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 4.2 A
Min
30
Typ
Max Units
V
Off Characteristics
20 1 25 100 -100 1 1.5 -4 33 44 15 10 460 115 45 VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 5 8 17 13 IF = 1.7 A, di/dt = 100 A/uS 9.4 1.2 1.1 1.7
(Note 2)
mV/C A nA nA V mV/C 65 95 m A S pF pF pF 20 30 35 20 80 15 nS nS nS nS nS nC nC nC A V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
2
Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
Turn-Off Fall Time Source-Drain Reverse Recovery Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 10 V, ID = 4.2 A, VGS = 10 V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.7 A Voltage 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
2 78C/W when mounted on a 1in pad of 2oz copper on FR-4 board.
a. b.
156C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
SI3454DV Rev A
SI3454DV
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
SI3454DV Rev A
SI3454DV
Typical Characteristics
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
SI3454DV Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

▲Up To Search▲

Price & Availability of SI3454DV

	To Download SI3454DV Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .